Low‐temperature metalorganic chemical vapor deposition of perovskite Pb(ZrxTi1−x)O3thin films
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Surface Chemical States of Heteroepitaxial Nitride Films on Sapphire by Metalorganic Chemical Vapor Deposition
Surface chemical states of GaN, AlGaN and InGaN by metalorganic chemical vapor deposition, and the influence of different dopants are studied with X-ray Photoelectron Spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak and a small N–H peak, while Ga 3d can be deconvoluted into three peaks from elemental Ga, GaN and Ga2O3. Si-dop...
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The metalorganic chemical vapor deposition of In0.06Ga0.94As1 xNx, with x 1⁄4 0.00–0.02, has been examined using nitrogen trifluoride (NF3) and tertiarybutylarsine. The solid N/V ratio increased linearly with the gas-phase N/V ratio up to a limit of 2.0% nitrogen in the film at a gas N/V 1⁄4 0.35. No further increase in nitrogen content could be achieved at a growth temperature of 550 1C unless...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1992
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.107646